IRFB4115 MOSFET 7LB179 Paralleled operation — combine both

Paralleled operation — combine both bridges for up to 5

Right IN: Stereo audio input

The specification is subject to change without notice in advance

Compact Size: Compact form factor allows for easy integration into various electronic projects

IRFB4115 MOSFET 7LB179 Paralleled operation — combine bothIRFB4115 mosfet details: Type of Transistor: MOSFET Type of Control Channel: N Channel Pd Maximum Power Dissipation: 380 W Vds Maximum Drain Source Voltage: 150 V Vgs Maximum Gate Source Voltage: 20 V Vgs(th) Maximum Gate Threshold Voltage: 5 V Id Maximum Drain Current: 104 A Tj Maximum Junction Temperature: 175 C Qg Total Gate Charge: 77 nC tr Rise Time: 73 nS Coss Output Capacitance: 490 pF Rds Maximum Drain Source On State Resistance: 0. 011 Ohm